POLARITY IDENTIFICATION OF GAN BULK SINGLE-CRYSTALS (0001) SURFACE BYAUGER-ELECTRON SPECTROSCOPY

Authors
ILLER A MARKS J GRZEGORY I LITWINSTASZEWSKA E BOCKOWSKI M
Citation
A. Iller et al., POLARITY IDENTIFICATION OF GAN BULK SINGLE-CRYSTALS (0001) SURFACE BYAUGER-ELECTRON SPECTROSCOPY, Crystal research and technology, 32(2), 1997, pp. 229-233
Citations number
13
Categorie Soggetti
Crystallography
Journal title
Crystal research and technology → ACNP
ISSN journal
02321300
Volume
32
Issue
2
Year of publication
1997
Pages
229 - 233
Database
ISI
SICI code
0232-1300(1997)32:2<229:PIOGBS>2.0.ZU;2-6
Abstract
An attempt to identify the polarity of (0001) polar surface of GaN bul k single crystals grown by high nitrogen pressure solution method has been made using Auger electron spectroscopy (AES). AES concentration d epth profiles of the top layer in (0001) direction starting from both (0001) faces of the sample have been measured. Distinct difference in the Ga concentration at the sample surface of both faces has been obse rved. The dependence of Ga concentration on depth is also different fo r both faces of the sample.