Y. Nakasaki et al., AB-INITIO MOLECULAR-ORBITAL STUDY OF WATER-ABSORPTION AND HYDROLYSIS OF CHEMICAL-VAPOR-DEPOSITED SIOF FILMS .1., JPN J A P 1, 36(4B), 1997, pp. 2533-2544
We investigated the mechanism of water absorption and hydrolysis of F-
doped SiO2 (SiOF) films using the ab initio molecular orbital (MO) met
hod with small SiFn(OH)(4-n) (n = 0-3) tetrahedral model clusters. Mie
focused on the dependence of the reactivity of these clusters with bo
th OH- and H2O on the number of F atoms bonded with a Si atom. The rea
ctivity of defect sites such as non bridging oxygens (NBOs) and free v
olumes around Si-F bonding were also investigated. The calculations re
vealed the following. SiOF films are more reactive with OH- than with
H2O. Si atoms linked with multiple F atoms become more reactive with H
2O by reducing the activation barrier of the -OH coordination to Si, a
nd with OH- by increasing the stabilization energy of the pentacoordin
ated-Si formation. Multiple H2O attacks at sparse, i.e., sparsely pack
ed, network sites increase the adsorption energy and reduce the activa
tion barrier. NBO defects also promote successive H2O adsorption.