PROCESS-INDUCED DEEP-LEVEL DEFECTS IN HIGH-PURITY SILICON

Deep-level defects appear in silicon upon heat treatment of wafers wit h surface disordered by mechanical lapping or introducing high concent ration impurity in diffusion layer, i.e. in regimes typical of fabrica tion of high voltage devices. By means of capacitance transient spectr oscopy, combined with other methods, it was shown that dominant electr on traps with ionization energies of 0.28 and 0.54 eV of double level donor have low recombination activity, but affect the resistivity of h igh purity Si and play a key role in limiting the p-n junction breakdo wn voltage V-b. A careful study of the defect parameters showed their similarity to sulphur-related centres in Si.