DETERMINATION OF THE EFFECTIVE HALL FACTOR IN P-TYPE SEMICONDUCTORS

The comparison of free hole concentrations in p-type semiconductors ob tained by Raman and by Hall measurements gives the possibility of dete rmining an effective Hall factor depending on temperature and hole con centration. This will be shown for GaAs, GaP and InP in the temperatur e range from 77 K to 300 K. In the case of GaAs the experimentally obt ained Hall factor is compared with a theoretical one, calculated from different scattering mechanisms within a two-band model. For the evalu ation of Raman measurements a generalization of the Drude theory inclu ding interband transitions is used. Theoretical Hall factors and the c omparison of calculated Hall mobilities with experimental ones are giv en. Possible sources of errors in the theory and in the evaluation of the experimental results are discussed.