INCORPORATION AND ELECTRICAL-ACTIVITY OF FE IN LEC INP

Citation
R. Fornari et al., INCORPORATION AND ELECTRICAL-ACTIVITY OF FE IN LEC INP, Semiconductor science and technology, 13(5), 1998, pp. 512-516
Citations number
15
Categorie Soggetti
Engineering, Eletrical & Electronic","Physics, Condensed Matter","Material Science
ISSN journal
02681242
Volume
13
Issue
5
Year of publication
1998
Pages
512 - 516
Database
ISI
SICI code
0268-1242(1998)13:5<512:IAEOFI>2.0.ZU;2-L
Abstract
InP crystals grown by the liquid encapsulated Czochralski method under different parameters are investigated by Hall effect, IR absorption, atomic absorption spectroscopy and glow discharge mass spectroscopy. T he concentrations of total and electrically active Fe atoms (substitut ional for In) in ingots pulled under different growth conditions are i ndependently determined. The results prove that the pulling rate can a ffect the effective Fe distribution coefficient. Quite surprisingly, w e found that the electrical activity of the incorporated iron (express ed as ratio Fe-active/Fe-total) changes dramatically between the top a nd tail of the LEC crystals.