EFFECT OF SOURCE AND DRAIN JUNCTIONS ON PLASMA CHARGING

Authors
MISRA D CHEUNG KP
Citation
D. Misra et Kp. Cheung, EFFECT OF SOURCE AND DRAIN JUNCTIONS ON PLASMA CHARGING, Semiconductor science and technology, 13(5), 1998, pp. 529-531
Citations number
6
Categorie Soggetti
Engineering, Eletrical & Electronic","Physics, Condensed Matter","Material Science
Journal title
Semiconductor science and technology → ACNP
ISSN journal
02681242
Volume
13
Issue
5
Year of publication
1998
Pages
529 - 531
Database
ISI
SICI code
0268-1242(1998)13:5<529:EOSADJ>2.0.ZU;2-0
Abstract
Threshold voltage and subthreshold swing were used to study the effect of potential developed at source and drain junctions on gate oxide da mage during plasma processing-induced wafer charging. During substrate injection, when the junctions are reverse-biased, the damage is highe r. On the other hand, during gate injection the gate oxide damage is s ignificantly reduced once the source and drain junctions become forwar d-biased. Hot carrier lifetime measurements also confirm this behaviou r.