SI(111)2X2-IN[--]SI(111)ROOT-3X-ROOT-3-IN SCANNING TUNNELING MICROSCOPE TIP-INDUCED STRUCTURAL TRANSFORMATION

Authors
SARANIN AA NUMATA T KUBO O TANI H KATAYAMA M OURA K
Citation
Aa. Saranin et al., SI(111)2X2-IN[--]SI(111)ROOT-3X-ROOT-3-IN SCANNING TUNNELING MICROSCOPE TIP-INDUCED STRUCTURAL TRANSFORMATION, JPN J A P 1, 36(6B), 1997, pp. 3814-3817
Citations number
25
Journal title
JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS → ACNP
Volume
36
Issue
6B
Year of publication
1997
Pages
3814 - 3817
Database
ISI
SICI code
Abstract
We have found STM tip-induced 2 x 2-In --> root 3 x root 3-In and root 3 x root 3-In --> 2 x 2-In structural transformations on a Si(lll) su rface at room temperature, relatively low bias voltages and large tip- sample separations. The processes were found to be reversible dependin g on the tip bias voltage polarity. Our results can be explained by ST M tip-induced diffusion of In atoms on the root 3 x root 3-In and 2 x 2-In surfaces.