A new method for fabricating a narrow gold wire is presented. The resu
ltant wire has width around 200 nm and length up to several microns. T
he wire is fabricated by using a tungsten tip to 'pull' gold atoms fro
m a gold thin film towards a bare silicon region. This method is belie
ved to be based bn the electro-migration effect. Moreover, the method
can be used as a fabrication method for closely separated electrodes f
or future atomic devices because the whole process can be done in an u
ltra-high-vacuum (UHV) environment.