FRACTAL BEHAVIOR IN THE MAGNETORESISTANCE OF CHAOTIC BILLIARDS

We have investigated the geometry-induced magnetoresistance (MR) obser ved in a high mobility AlGaAs/GaAs electron billiard device. Our billi ard is shaped by a surface gate arrangement incorporating a 'bridging interconnect' fabrication; technique which allows independent control of the cavity's central circular antidot and evolution from a regular square to a nominally chaotic environment in a single device. The low field MR signature of the device displays a marked fractal form with M R structure on a magnetic field scale much finer than that previously reported for generically similar electron-wave billiards.