ATOMIC-LAYER SURFACE-REACTION OF SIH4 ON GE(100)

The single atomic layer growth process of Si on a Ge(100) surface usin g SiH4 has been investigated by ultraclean cold-wall low-pressure chem ical vapor deposition (CVD). Self-limiting reaction of SiH4 on the Ge surface was found at 260 degrees C and the reaction step can be explai ned by Langmuir-type kinetics. The saturated surface concentration of Si atoms depends on the preheating conditions. A single atomic layer w as found for preheating at 350 degrees C in Ar and at 260 degrees C in H-2. However, in the case of preheating in H-2 at 350 degrees C, the Si atom concentration hardly reached that of a single atomic layer. Re flection high-energy electron diffraction (RHEED) and Fourier-transfor m infrared reflection adsorption spectroscopy (FTIR/RAS) observations showed that a H-terminated dimer structure was formed on the Ge(100) s urface after preheating in H-2 at 350 degrees C. The density of the Si H4 reaction sites on the H-terminated surface with the dimer structure is considered to be lower than that of the H-terminated unreconstruct ed surface and the H-free surface.