SELF-ORGANIZED CDSE QUANTUM DOTS ON (100)ZNSE GAAS SURFACES GROWN BY METALORGANIC MOLECULAR-BEAM EPITAXY/

II-VI semiconductor low-dimensional structures, quantum dots, have bee n grown on GaAs substrates by metalorganic molecular beam epitaxy (MOM BE). Before the heteroepitaxial growth, atomically flat, As-stabilized GaAs surfaces were prepared by high-temperature As cleaning using tri s-dimethylamino-arsenic (TDMAAs). CdSe thin films deposited on (100)Zn Se/GaAs surfaces have been investigated with atomic force microscopy ( AFM) and were found to form three-dimensional islands with rather unif orm size distribution. A large mismatch (similar to 7%) Oi lattice con stants between CdSe and ZnSe pseudomorphically grown on GaAs possibly results in the Stranski-Krastanov growth mode. CdSe quantum dots with a diameter of 97 +/- 11 nm were successfully formed at 350 degrees C.