INAS GAAS QUANTUM DOTS GROWN BY METALORGANIC CHEMICAL-VAPOR-DEPOSITION/

InAs quantum dots (QDs) have been grown by metalorganic chemical vapor deposition on exactly (001) oriented GaAs using the Stranski-Krastano w growth mode. The samples exhibit a high average dot density of 4 x 1 0(10) cm(-2) with no defects over macroscopic areas. The QDs show brig ht room temperature luminescence at around 1.1 eV. Vertical dot stacks consisting of up to 5 QD sheets with various GaAs separation layer th icknesses have been produced. Transmission eletron microscope images s how pronounced QD ordering in the growth direction. For thin separatio n layers the dot luminescence is red shifted by similar to 70 meV for the stacked dots as compared to single dot sheets. A low threshold (10 0 A/cm(2) at 77 K) separate confinement heterojunction laser with a fi ve-fold dot stack as an active medium operating at up to room temperat ure is demonstrated.