VERTICALLY COUPLED QUANTUM-DOT LASERS - FIRST DEVICE ORIENTED STRUCTURES WITH HIGH INTERNAL QUANTUM EFFICIENCY

Authors
ZAITSEV SV GORDEEV NY KOPCHATOV VI USTINOV VM ZHUKOV AE EGOROV AY LEDENTSOV NN MAXIMOV MV KOPEV PS KOSOGOV AO ALFEROV ZI
Citation
Sv. Zaitsev et al., VERTICALLY COUPLED QUANTUM-DOT LASERS - FIRST DEVICE ORIENTED STRUCTURES WITH HIGH INTERNAL QUANTUM EFFICIENCY, JPN J A P 1, 36(6B), 1997, pp. 4219-4220
Citations number
5
Journal title
JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS → ACNP
Volume
36
Issue
6B
Year of publication
1997
Pages
4219 - 4220
Database
ISI
SICI code
Abstract
Main mechanisms of internal carrier losses and leakage from the ground state of quantum dots have been studied in heterostructure lasers bas ed on vertically coupled quantum dots. It has been shown that the thre shold current density may be reduced down to 15 A/cm(2) at room temper ature by reducing the non-radiative recombination and improving the ca rrier localization.