METALORGANIC VAPOR-PHASE EPITAXY OF THICK INGAN ON SAPPHIRE SUBSTRATE

Growth of thick InGaN films was performed on single crystal films of G aN or AlGaN and buffer layers of AlN, GaN or AlGaN by metalorganic vap or phase epitaxy (MOVPE). In the growth of InGaN on GaN or AlGaN films , smooth InGaN films with small indium mole fractions were grown in th e initial growth stage caused by strong stress due to lattice mismatch . However, with an increase in thickness of the InGaN film surface bec ame rough due to the generation of InGaN grains with large indium mole fractions. Smooth and thick (similar to 2 mu m) InGaN films with larg e indium mole fractions were grown on AlN, GaN or AlGaN buffer layers.