HALL-EFFECT MEASUREMENT AND BAND BENDING CALCULATION OF HYDROGENATED DIAMOND FILM GROWN BY CHEMICAL-VAPOR-DEPOSITION

The surface conductive layer in a hydrogenated chemical vapor deposite d diamond film was studied experimentally and analytically. The Hall e ffect measurement showed that the hole areal density at the surface in troduced unintentionally was as high as 10(13)/cm(2), which was about an order of magnitude higher than that used in the conventional field- effect transistors. We have analyzed the surface band bending from the quantum-mechanical point of view to determine the equivalent Fermi le vel pinning position settled after hydrogenation. It was found that, a t the surface: the Fermi level locates inside the valence band at a de pth of 0.36eV from the valence band edge.