4.5 KV INJECTION ENHANCED GATE TRANSISTOR - EXPERIMENTAL-VERIFICATIONOF THE ELECTRICAL CHARACTERISTICS

Experimental verifications are presented for the injection enhanced ga te effects of a new metal oxide semiconductor (MOS) controlled power t ransistor. We call this transistor an ''injection enhanced gate transi stor'' (IEGT). It was first experimentally confirmed that IEGTs achiev e the same low on-state voltage drop as that of gate turn-off (GTO) th yristors without degradation of turn-off capability. The fabricated 4. 5 kV IEGT with 8 mu m deep trench gates exhibited an on-state voltage of 2.5V at 100A/cm(2), and the measured on-state voltage drop as a fun ction of the trench gate structural parameter agrees well with the pre dicted values. By use of the fabricated IEGT, 4.2 kV self-clamped anod e voltage switching operation was achieved at a turn-off current densi ty of 65 A/cm(2). The observed electrical characteristics of the fabri cated IEGTs agree well with the predicted characteristics, and it was confirmed that high voltage and high power can be directly controlled by a MOS gate.