The nickel/diamond(100)-(2 x 1)H interface has been studied using Auge
r electron spectroscopy, electron energy loss spectroscopy and low-ene
rgy electron diffraction. Deposition of ultrathin nickel films at room
temperature results in the formation of disordered nickel islands, wh
ereas heteroepitaxial growth is achieved during deposition at 520 K. A
t temperatures above 850 K nickel interaction with the uppermost diamo
nd layers causes graphitization of the diamond surface, a process whic
h starts only at temperatures above 1500 K on the clean diamond surfac
e.