THE NICKEL DIAMOND(100)-(2X1)H INTERFACE STUDIED WITH ELECTRON-SPECTROSCOPY/

Citation
M. Pitter et al., THE NICKEL DIAMOND(100)-(2X1)H INTERFACE STUDIED WITH ELECTRON-SPECTROSCOPY/, JPN J A P 1, 36(6A), 1997, pp. 3635-3638
Citations number
16
Volume
36
Issue
6A
Year of publication
1997
Pages
3635 - 3638
Database
ISI
SICI code
Abstract
The nickel/diamond(100)-(2 x 1)H interface has been studied using Auge r electron spectroscopy, electron energy loss spectroscopy and low-ene rgy electron diffraction. Deposition of ultrathin nickel films at room temperature results in the formation of disordered nickel islands, wh ereas heteroepitaxial growth is achieved during deposition at 520 K. A t temperatures above 850 K nickel interaction with the uppermost diamo nd layers causes graphitization of the diamond surface, a process whic h starts only at temperatures above 1500 K on the clean diamond surfac e.