GROWTH OF QUANTUM-CONFINED INDIUM-PHOSPHIDE INSIDE MCM-41

An array of analytical techniques comprising powder X-ray diffraction, solid-state NMR spectroscopy, high-resolution transmission electron m icroscopy, nitrogen adsorption, and UV/vis diffuse reflectance spectro scopy has been applied to study the incorporation of indium phosphide semiconductor inside MCM-41 materials by metal organic chemical vapor deposition. Line broadening in the X-ray diffraction patterns suggests the existence of both large surface deposited indium phosphide partic les and nanosized indium phosphide particles deposited within the pore s. High-resolution transmission electron microscopy corroborates this result: surface deposits have been imaged, and analysis of electron di ffraction patterns provides-evidence of the existence of nanoparticles . Nitrogen adsorption provides information on pore filling. Quantum-co nfinement effects,, brought about by the nanoparticle size regime, are evidenced by upfield shifting of the indium phosphide resonance in th e P-31 magic-angle-spinning NMR spectra and by blue shifting of the ba nd gap dependent transition in the UV/vis absorption spectra.