GROWTH OF ACTIVE ND-DOPED YAP THIN-FILM WAVE-GUIDES BY LASER-ABLATION

Authors
SONSKY J LANCOK J JELINEK M OSWALD J STUDNICKA V
Citation
J. Sonsky et al., GROWTH OF ACTIVE ND-DOPED YAP THIN-FILM WAVE-GUIDES BY LASER-ABLATION, Applied physics A: Materials science & processing, 66(5), 1998, pp. 583-586
Citations number
13
Categorie Soggetti
Physics, Applied
Journal title
Applied physics A: Materials science & processing → ACNP
ISSN journal
09478396
Volume
66
Issue
5
Year of publication
1998
Pages
583 - 586
Database
ISI
SICI code
0947-8396(1998)66:5<583:GOANYT>2.0.ZU;2-O
Abstract
The epitaxial growth of Nd-doped YAlO3 (YAP) thin films as a promising material for application in a planar waveguide laser has been studied . The films have been grown on sapphire(0001) and YAP(001) substrates by laser ablation. The influence of the substrate temperature and ambi ent oxygen pressure on the crystalline structure, concentration of Nd incorporated into films, and consequent luminescence spectra were inve stigated. The waveguiding properties were observed and refractive inde x of the films was evaluated.