Jh. Kim et al., MEASUREMENT OF THE THERMAL-CONDUCTIVITY OF SI AND GAAS WAFERS USING THE PHOTOTHERMAL DISPLACEMENT TECHNIQUE, International journal of thermophysics, 19(1), 1998, pp. 281-290
Thermal conductivity and thermal diffusivity of Si and GaAs wafers wer
e measured using the photothermal displacement technique, and the temp
erature dependence of these two quantities was investigated. Thermal d
iffusivity was obtained from the phase difference between the healing
source and the signal, and thermal conductivity was determined From th
e maximum value of the signal amplitude in the temperature range 80 to
300 K. It was verified that an increase in doping concentration gives
rise to a decrease in thermal conductivity at low temperatures. The e
xperimental results obtained on samples with different types and dopin
g concentrations are consistent with those expected from theoretical c
onsiderations.