We report on the dependence on temperature and disorder of the glassy
behavior observed in thin films of In2O3-x in the strongly localized r
egime. The glassy behavior is reflected as a local minimum at the cool
-down gate voltage in the conductance vs. gate-voltage, G(V-g) sweeps
of field-effect experiments. It is shown that these non-ergodic effect
s are controlled by an inverse-Arrhenius law and involves a characteri
stic energy which increases with disorder.