DIFFUSION OF PT IN MOLECULAR-BEAM EPITAXY-GROWN ZNSE

Diffusion of platinum in zinc selenide has been studied by the use of the He-4 and C-12 ion backscattering techniques. The samples were thin films grown by molecular beam epitaxy on GaAs (100) epitaxial layers followed by evaporation of platinum and annealing in the temperature r ange 500-800 degrees C. The diffusion coefficients were determined by the fitting of a concentration independent solution of the diffusion e quation to the experimental depth profiles. The activation energy and the pre-exponential factor of the diffusion process were found to be 1 .7 eV and 6.4 X 10(-6) cm(2)/s, respectively. (C) 1998 American Instit ute of Physics. [S0003-695 1(98)00220-4].