EVIDENCE OF HYDROGEN-CARBON INTERACTIONS IN PLASMA HYDROGENATED CARBON-DOPED N-INP

Unlike GaAs which is p type, InP, when doped with the amphoteric C, is known to exhibit n-type conduction but with a low carrier-to-dopant r atio. To learn more about C behavior, we have intentionally introduced atomic H in C-doped n-InP by exposing the samples to a radio-frequenc y deuterium plasma. We show here that C, unlike other it dopants (S, S n, and Si), strongly interacts with H in InP. First, the distribution of deliberately introduced H closely follows that of C. Second, for al l C dopings studied here, the H concentration is nearly equal to that of C. Finally, and most importantly, the electrical properties of the material are also significantly altered, for instance, the free-electr on concentration increases by more than an order of magnitude in certa in samples. (C) 1998 American Institute of Physics.