GROWTH OF INGAAS MULTIQUANTUM WELLS AT 1.3 MU-M WAVELENGTH ON GAAS COMPLIANT SUBSTRATES

InGaAs multiple quantum wells at 1.3 mu m wavelength have been grown o n a twist-bended GaAs compliant substrate. The GaAs compliant substrat e contains a 30 Angstrom GaAs thin layer bonded to a GaAs bulk substra te with a 22-degree angle. Nomarski phase contrast microscopy, transmi ssion electron microscopy (TEM), and photoluminescence were used to ch aracterize the heteroepitaxial layers. The smooth and crosshatch-free surface morphology, dislocation-free cross-sectional TEM, and strong l uminescence intensity all provide convincing evidences for substantial improvement of the quality of heteroepitaxial material using the comp liant substrate technique. Research is underway to apply the concept a nd technique of compliant substrate to Si and other materials. (C) 199 8 American Institute of Physics.