INFLUENCE OF DEPTH POSITION OF END-OF-RANGE DEFECTS ON CURRENT-VOLTAGE AND NOISE CHARACTERISTICS OF SHALLOW (P(+) N) JUNCTIONS/

The goal of this work is to study the relationship that exists between a population of end of range (EOR) defects, measured by TEM, and elec trical properties of the Ge preamorphized (p(+)/n) junctions. In this paper, we report current-voltage (I-V) and low frequency (L-F) noise m easurements, performed on crystalline and Ge preamorphized diodes, as a function of temperature. The I-V measurements reveal the conduction process which is dominant in tile shallow (p(+)/n) junctions: while L- F rloise characteristics confirm the presence of generation-recombinat ion centers in direct relation to tile presence of EOR defects in the n region. Moreover, temperature-L-F noise measurements have shown a dr awback of this shallow (p(+)/n) junction formation procedure, independ ent of the preamorphization step. Nevertheless, high-quality (p(+)/n) junctions can be obtained by low-energy boron implantation into german ium preamorphized Si substrates using rapid thermal annealing for dopa nt activation through tile judicious choice of Ge implantation energy.