A NOVEL THIN-FILM-TRANSISTOR WITH VERTICAL OFFSET STRUCTURE

A novel device structure consisting of conventional hydrogenated amorp hous silicon (a-Si:H) for the source and drain and oi hydrogenated mic rocrystalline soilicon (mu c-Si:H) for the channel region which can im prove the performance of thin-film transistors (TFTs) has been propose d and fabricated. Undoped a-Si:H serves as a blocking layer to suppres s the OFF-state current in the drain region which is comparable to tha t of conventional a-Si:H TFT with a much higher drivability. The fabri cation process is simple and inexpensive e with the possibility of hig h reliability.