THIN-FILMS OF C-60 DOPED WITH PB

Citation
D. Mendoza et al., THIN-FILMS OF C-60 DOPED WITH PB, JPN J A P 1, 36(4A), 1997, pp. 2176-2178
Citations number
18
Categorie Soggetti
Physics, Applied
Volume
36
Issue
4A
Year of publication
1997
Pages
2176 - 2178
Database
ISI
SICI code
Abstract
In the present work we report the synthesis of thin films of C-60 dope d with Pb. By characterization we found that small quantities of Pb in creases the electrical conductivity, giving as a result a semiconducti ng-like behavior in the range of temperatures from 2 K to 470 K. At hi gher content of Pb, the system tends to form particles of Pb. In this case, the electrical resistance shows a metallic-like transition below 7 K, but we did not observe zero resistance up to 2 K. We also found that the films readily reacts upon exposure to the laboratory atmosphe re.