ELECTRICAL-PROPERTIES OF SOL-GEL DEPOSITED BATIO3 THIN-FILMS ON SI(100) SUBSTRATES

The electrical properties of sol-gel deposited BaTiO3 thin films on Si (100) and SiO2-buffered Si(100) substrates were investigated. The diel ectric constant measured as a function of frequency was fitted using t he space charge relaxation model. The effective dielectric constant (e psilon') and dissipation factor (tan delta) were determined in the acc umulation region from the results of capacitance-voltage (C-V) measure ments at room temperature, at 1 MHz. Values of 23-185 and 0.02-0.08 we re determined, respectively. The density of the interfacial surface sl ates (N-ss), calculated from the width of the memory window of the C- V curve, was of the order of 10(11)-10(12) eV(-1) cm(-2). The leakage current densities for BaTiO3 films deposited on Si and SiO2-buffered S i substrates were 22-57 nA/cm(2) and 0.85-4 nA/cm(2), respectively, at an applied field of 100 kV/cm. The dielectric breakdown strength exce eded 1 MV/cm for all films.