THE EFFECTS OF SUBSTRATE-TEMPERATURE AND LEAD PRECURSOR FLOW-RATE ON THE FABRICATION OF (PB,LA)(ZR,TI)O-3 THIN-FILMS BY ELECTRON-CYCLOTRON-RESONANCE PLASMA-ENHANCED CHEMICAL-VAPOR-DEPOSITION

La-doped lead zirconate titanate (PLZT) thin films were fabricated on Pt/Ti/SiO2/Si substrates by electron cyclotron resonance plasma-enhanc ed chemical vapor deposition (ECR-PECVD) method. The composition and t he electrical properties of the films were investigated as a function of deposition temperature and Pb-source flow rate. Stoichiometric film with pure perovskite structure was fabricated at a deposition tempera ture as low as 450 degrees C. As the deposition temperature was increa sed, the vapor pressure of lead oxide molecules increased and thus the PLZT film tended to be Pb-deficient, resulting in the formation of a non-perovskite phase and the degradation of electrical properties. Thi s problem could be relieved by increasing the Pb-source flow rate. Rap id thermal annealing (RTA) greatly enhanced the electrical properties of the PLZT film as long as the as-deposited film had stoichiometric c omposition and pure perovskite structure. The rapid thermal annealed P LZT film (74 nm thick) had an effective charge density of 150 fF/mu m( 2), dielectric constant of 1216 and SiO2 equivalent thickness of 0.24 nm.