WEAK ANTILOCALIZATION IN SI DELTA-DOPED INXGA1-XAS SYSTEMS

Authors
TAKAGAKI Y HEY R DAWERITZ L PLOOG K TARUCHA S
Citation
Y. Takagaki et al., WEAK ANTILOCALIZATION IN SI DELTA-DOPED INXGA1-XAS SYSTEMS, JPN J A P 1, 36(4A), 1997, pp. 2212-2213
Citations number
15
Categorie Soggetti
Physics, Applied
Journal title
JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS → ACNP
Volume
36
Issue
4A
Year of publication
1997
Pages
2212 - 2213
Database
ISI
SICI code
Abstract
We have investigated the transport properties of a quasi-two-dimension al electron gas in Si delta-doped InxGa1-xAs/GaAs (001) systems with x = 0.2 and 0.3 at T = 0.3-3 K. A large electron density of 8.4 X 10(16 ) m(-2) is obtained for the doping density 10(17) m(-2). We have evlua ted the phase breaking time and the spin-orbit scattering time by mean s of the weak antilocalization effect. The two-dimensional electron-el ectron interaction in disordered systems is found to be responsible fo r the dephasing.