Solid-phase reactions taking place in an epitaxial Al/YSi2-x/Si contac
t system are examined by X-ray diffraction and depth profiling using A
uger electron spectroscopy. The diffusion of Al into YSi2-x and the su
bsequent reaction between Al and Y forming Al3Y take place after annea
ling for Ih at 400 and 450 degrees C, respectively. Although an out-di
ffusion of Si and Y leads to failure of the contact system, the distri
bution of Al is restricted to within the initially formed YSi2-x layer
without forming Al spikes.