DEFECT CREATION IN A-SI-H THIN-FILM TRANSISTORS BY BIAS-STRESS

We have studied defect creation in hydrogenated amorphous silicon thin film transistors by measuring the I-V characteristic curves with the bias condition varied. It is found that there is a distortion in the I -V curves after a spatially asymmetric bias-stress. In order to explai n the unusual behavior in the I-V characteristic curves, we employed i ncreased defects at the lower part of the gap which have an asymmetric distribution along the channel due to the spatially asymmetric positi ve gate bias. Compared with the experiments, good agreement is obtaine d.