SEMICONDUCTOR CIRCULAR RING LASERS FABRICATED WITH THE CRYO-ETCHING TECHNIQUE

Citation
Ch. Tsai et al., SEMICONDUCTOR CIRCULAR RING LASERS FABRICATED WITH THE CRYO-ETCHING TECHNIQUE, IEEE photonics technology letters, 10(6), 1998, pp. 751-753
Citations number
10
Categorie Soggetti
Optics,"Physics, Applied
ISSN journal
10411135
Volume
10
Issue
6
Year of publication
1998
Pages
751 - 753
Database
ISI
SICI code
1041-1135(1998)10:6<751:SCRLFW>2.0.ZU;2-E
Abstract
GaAs-AlGaAs multiple quantum well semiconductor circular ring lasers w ith a sigma shape were fabricated by using the deep UV laser-assisted cryo-etching technique, Most of the fabricated lasers had external qua ntum efficiencies of more than 18% which were higher than similar devi ces previously reported. The modal spacing observed from the resonance spectrum near threshold was always several times that corresponding t o the circular oscillation of the ring cavity, The observed modal spac ing was quite consistent with the theoretical result based on a couple d-cavity model.