ELECTRICAL AND OPTICAL CHARACTERISTICS OF N-TYPE-DOPED DISTRIBUTED BRAGG MIRRORS ON INP

The development of high reflectivity and low electrical resistivity Br agg mirrors is crucial for the emergence of 1.55-mu m vertical-cavity surface-emitting lasers (VCSEL's), Here, we report on three different n-type-doped semiconductor Bragg mirrors which are all lattice-matched to InP, The material systems are InGaAsP-InP, AlGaInAs-AlInAs, and Al GaAsSb-AlAsSb and the layers are designed for 1.55-mu m operation. The influence of the structural and intrinsic properties of the different heterostructures on the electrical resistivity and optical reflectivi ty is analyzed for the three samples.