SIGE-SI QUANTUM-WELL ELECTROABSORPTION MODULATORS

Authors
QASAIMEH O BHATTACHARYA P CROKE ET
Citation
O. Qasaimeh et al., SIGE-SI QUANTUM-WELL ELECTROABSORPTION MODULATORS, IEEE photonics technology letters, 10(6), 1998, pp. 807-809
Citations number
10
Categorie Soggetti
Optics,"Physics, Applied
Journal title
IEEE photonics technology letters → ACNP
ISSN journal
10411135
Volume
10
Issue
6
Year of publication
1998
Pages
807 - 809
Database
ISI
SICI code
1041-1135(1998)10:6<807:SQEM>2.0.ZU;2-R
Abstract
We have measured the characteristics of SiGe-Si quantum-web (QW) waveg uide electroabsorption modulators grown by molecular beam epitaxy (MBE ). The modulation is based on the decoupling of the electron wavefunct ion from the shallow wells for electrons with a small band-bending. A 100-mu m-long modulator demonstrates contrast ratio and insertion loss of 1.43 and 28.5 dB, respectively.