L. Fouilland et al., COMPOSITION AND TRIBOLOGICAL CHARACTERIZATION OF CHEMICALLY VAPOR-DEPOSITED TIN LAYER, Surface & coatings technology, 101(1-3), 1998, pp. 146-148
Titanium nitride is well known for various applications such as mechan
ic. microelectronic or jewellery. Physically vapour deposited TIN film
s are widely studied but very few data are available about chemically
vapour-deposited thin films. In the present paper, TiN films of less t
han 1 mu m thick are deposited by low pressure chemical vapour deposit
ion from the TiCl4-NH3-H-2 gaseous phase onto silicon substrates. Ruth
erford backscattering spectrometry analyses show that TiN films are al
ways close to the stoichiometry. The contamination levels are very low
: less than 3.5% for oxygen and less than 0.1% for chlorine. The densi
ty values lie in the range 3.5-4 g cm(-3). Deposited films are very ad
herent to the substrate as confirmed by micro-scratch tests. Friction
coefficient and wear are studied through a pin-on-disc tribometer in a
ir and at room temperature. The common value of 0.2 for friction coeff
icient is obtained even for films as thin as 120 nm. (C) 1998 Elsevier
Science S.A.