SnO2 thin films were deposited on Ti substrates by metal-organic chemi
cal vapor deposition using the reactive gas mixture SnEt4-O-2 to prepa
re electrode materials. A kinetic study of the growth process has been
carried out as a function of the deposition parameters and a simulati
on model of the growth rate was used to obtain rapidly thickness varia
tions on flat substrates of less than 2% along the axis of the reactor
over an isothermal length of 150 mm long. This deposition process has
been used for the preparation of SnO2/Ti electrodes subsequently used
in the electrochemical treatment of industrial wastewater. (C) 1998 P
ublished by Elsevier Science S.A.