HIGH-QUALITY CONDUCTIVE IN2O3[SN] AND RUO2 LAYERS GROWN BY MAGNETRON SPUTTERING

Thin In2O3[Sn] (ITO) and RuO2 layers were grown in situ by reactive d. c. magnetron sputtering under Ar.O-2 pressures of 5-10 Pa on various c rystalline substrates. Epitaxial ITO films have been prepared at 500-7 50 degrees C on (100), (110) and (211) surfaces of YSZ and MgO(100); m eanwhile, the [011] axis-oriented RuO2 has been grown epitaxially at 4 00-750 degrees C on alpha-Al2O3(1102). Carrier density and mobility in the films were evaluated from electrical resistivity, Hall effect, op tical reflectance and transmittance measurements. In-situ resistivity measurements were performed to investigate stoichiometry variation of the ITO layers occurring with their annealing at various temperatures and oxygen pressures. (C) 1998 Elsevier Science S.A.