STABILITY OF BILAYER FILMS OF YBA2CU3O7 AND Y-ZRO2 GROWN ON LAALO3 BYPULSED ORGANOMETALLIC BEAM EPITAXY

Authors
KAATZ FH MARKWORTH PR DAI JY BUCHHOLZ DB LIU XN CHUDZIK MP BELOT JA KANNEWURF CR MARKS TJ CHANG RPH
Citation
Fh. Kaatz et al., STABILITY OF BILAYER FILMS OF YBA2CU3O7 AND Y-ZRO2 GROWN ON LAALO3 BYPULSED ORGANOMETALLIC BEAM EPITAXY, CHEMICAL VAPOR DEPOSITION, 4(3), 1998, pp. 99
Citations number
16
Categorie Soggetti
Materials Science, Coatings & Films",Electrochemistry,"Physics, Condensed Matter
Journal title
CHEMICAL VAPOR DEPOSITION → ACNP
ISSN journal
09481907
Volume
4
Issue
3
Year of publication
1998
Database
ISI
SICI code
0948-1907(1998)4:3<99:SOBFOY>2.0.ZU;2-V
Abstract
Communication: The first successful deposition of a bilayer of YBCO an d YSZ is reported. Application of high-ir, superconducting materials t o wires or coated conductors requires an inert, oriented crystalline b uffer layer to provide lattice strain relief and chemical stability. P ulsed organometallic beam epitaxy (POMBE) has been used to deposit hig hly crystalline YBCO on YSZ, as can be seen from the electron diffract ion pattern of YBCO/YSZ.