PREPARATION OF ORGANIC SILICA FILMS WITH LOW DIELECTRIC-CONSTANT FROMTHE LIQUID-PHASE

Citation
K. Usami et al., PREPARATION OF ORGANIC SILICA FILMS WITH LOW DIELECTRIC-CONSTANT FROMTHE LIQUID-PHASE, JPN J A P 2, 37(4A), 1998, pp. 420-422
Citations number
6
Categorie Soggetti
Physics, Applied
Volume
37
Issue
4A
Year of publication
1998
Pages
420 - 422
Database
ISI
SICI code
Abstract
Silica films with dense methyl-groups were grown from the liquid phase using methyl-triethoxy-silano, aiming at inter-metal-dielectrics appl ications. The him showed insulating characteristics even under as-depo sited conditions. The dielectric constant, low-field resistivity and b reakdown field-strength were 4.5, 3 x 10(13) Omega cm and 1 MV/cm, res pectively. They were improved to 2.9, more than 5 x 10(14) R cm and mo re than 2 MV/cm, respectively, after 400 degrees C vacuum annealing.