Silica films with dense methyl-groups were grown from the liquid phase
using methyl-triethoxy-silano, aiming at inter-metal-dielectrics appl
ications. The him showed insulating characteristics even under as-depo
sited conditions. The dielectric constant, low-field resistivity and b
reakdown field-strength were 4.5, 3 x 10(13) Omega cm and 1 MV/cm, res
pectively. They were improved to 2.9, more than 5 x 10(14) R cm and mo
re than 2 MV/cm, respectively, after 400 degrees C vacuum annealing.