ROOM-TEMPERATURE OPERATION OF AMORPHOUS CARBON-BASED SINGLE-ELECTRON TRANSISTORS FABRICATED BY BEAM-INDUCED DEPOSITION TECHNIQUES

Single-electron transistors (SETs) were directly fabricated using scan ning electron microscopy (SEM) and a focused ion beam (FIB) system. Am orphous carbon microstructures were modified to the source, drain elec trodes and the capacitive island using SEM. The gate electrode consist ing of tungsten carbide deposited by RE was also supplemented. Namely, microscopic tunnel junctions were prepared by beam-induced reaction p rocesses, which are simple and unique techniques for microfabrication. At room temperature, a Coulomb staircase and Coulomb blockade oscilla tion were successfully recorded, and this beam-induced method was conf irmed to be one of the practical processes for realizing SETs.