LOW-TEMPERATURE GROWTH OF EPITAXIAL LA0.5SR0.5COO3 FILMS ON (100)SRTIO3 BY PULSED-LASER DEPOSITION

Citation
Kh. Wong et al., LOW-TEMPERATURE GROWTH OF EPITAXIAL LA0.5SR0.5COO3 FILMS ON (100)SRTIO3 BY PULSED-LASER DEPOSITION, Thin solid films, 312(1-2), 1998, pp. 7-10
Citations number
18
Categorie Soggetti
Physics, Applied","Material Science","Physics, Condensed Matter
Journal title
ISSN journal
00406090
Volume
312
Issue
1-2
Year of publication
1998
Pages
7 - 10
Database
ISI
SICI code
0040-6090(1998)312:1-2<7:LGOELF>2.0.ZU;2-#
Abstract
Perovskite conductive La0.5Sr0.5CoO3 (LSCO) thin films were grown in s itu on (100)SrTiO3 by pulsed laser deposition at 400, 450 and 500 degr ees C. Heterostructures of Pb(Zr0.54Ti0.46)O-3/LSCO and YBa2Cu3O7-x/LS CO were also prepared in situ on the same substrates, where the LSCO l ayers were deposited at 500 degrees C. All the films were characterize d structurally by X-ray diffraction in both Bragg-Brentano and four-ci rcle geometry. A cube-on-cube growth of the bilayers as well as the LS CO film grown at 500 degrees C confirmed that LSCO can be grown epitax ially on the lattice-matched single crystal substrate at a temperature as low as 500 degrees C, which is well compatible with existing Si pr ocess technology. (C) 1998 Elsevier Science S.A.