EFFECT OF H-2 AND N-2 IN THE REMOTE PLASMA-ENHANCED METAL-ORGANIC CHEMICAL-VAPOR-DEPOSITION OF TIN FROM TETRAKIS-DIETHYL-AMIDO-TITANIUM

The effect of H-2 and N-2 in the plasma in the remote plasma enhanced metal organic chemical vapor deposition (MOCVD) of TiN from tetratkis- diethyl-amido-titanium (TDEAT) was studied. The growth rate with H-2 i n the plasma is about four times higher than that with N-2 in the plas ma and both processes required similar activation energies. 9.70 and 9 .33 kcal/mol, respectively. Carbon was incorporated as TiC and hydroca rbons in the TiN film and the fraction of carbon as TiC phase was high er using H-2 plasma. The film deposited with H-2 in the plasma had a l ower resistivity due to the lower level of carbon incorporation in the film. The surface of the film deposited with N-2 in the plasma was ro ugher. It was believed that hydrogen radicals reacted with nitrogen at oms in TDEAT and produced Ti-rich film with lower carbon contents whil e nitrogen radicals produced films containing much more hydrocarbon. ( C) 1998 Elsevier Science S.A.