PREPARATION OF EPITAXIAL PBTIO3 THIN-FILMS BY PULSED-LASER DEPOSITION

Epitaxial PbTiO3 thin films were prepared in situ by pulsed laser depo sition on MgO(001) and SrTiO3(001) single crystal substrates. The effe cts of oxygen pressure and substrate temperature on the growth of film s were investigated. The favorable conditions for the fabrication of e pitaxial films were identified. Appropriate control of oxygen pressure in the range of 200-250 mTorr was necessary for epitaxial PbTiO3 thin films and higher substrate temperature up to 700 degrees C was prefer red. The epitaxial relation between film and substrate is PbTiO3{001}/ /MgO(001), PbTiO3[100]//MgO[100]. The chemical composition of the film was very similar to the ideal stoichiometry of PbTiO3. (C) 1998 Elsev ier Science S.A.