GROWTH OF 8H POLYTYPE OF DIAMOND USING CYCLIC GROWTH ETCH OXY-ACETYLENE FLAME SETUP/

Authors
KAPIL R MEHTA BR VANKAR VD
Citation
R. Kapil et al., GROWTH OF 8H POLYTYPE OF DIAMOND USING CYCLIC GROWTH ETCH OXY-ACETYLENE FLAME SETUP/, Thin solid films, 312(1-2), 1998, pp. 106-110
Citations number
20
Categorie Soggetti
Physics, Applied","Material Science","Physics, Condensed Matter
Journal title
Thin solid films → ACNP
ISSN journal
00406090
Volume
312
Issue
1-2
Year of publication
1998
Pages
106 - 110
Database
ISI
SICI code
0040-6090(1998)312:1-2<106:GO8POD>2.0.ZU;2-3
Abstract
Diamond thin films were deposited using a cyclic growth/etch oxy-acety lene process on tungsten substrates. Growth of SH polytype of diamond was observed in the diamond thin films. Deposition of 8H polytype of d iamond was found to be strongly dependent on the process parameters. T wo different phases of tungsten carbide which were formed at the subst rate/film interface were also identified by X-ray diffraction. Raman s pectrum of these samples confirmed the presence of 8H polytype. (C) 19 98 Elsevier Science S.A.