A new method for the growth of solid-solution thin films has been deve
loped in which a pre-determined ratio of the components can be deposit
ed by the controlled use of a single rotating target. This variable co
mpositional control is achieved by altering the radial position of eit
her the target, which incorporates wedge-shaped segments of the solid-
solution components, or of the laser beam. The method was used to grow
films of the solid solution KTa1-xNbxO3 for which the predicted and m
easured values of the ferroelectric transition temperature far selecte
d Ta/Nb ratios were in excellent agreement. This approach is generally
applicable to solid-solution systems and is not restricted to ferroel
ectric oxides. (C) 1998 Elsevier Science S.A.