FERROELECTRIC PROPERTIES OF CRYSTALLINE ORIENTED PB(ZR,TI)O-3 THIN-FILMS PREPARED BY SOL-GEL TECHNIQUE

Citation
Eg. Lee et al., FERROELECTRIC PROPERTIES OF CRYSTALLINE ORIENTED PB(ZR,TI)O-3 THIN-FILMS PREPARED BY SOL-GEL TECHNIQUE, Thin solid films, 312(1-2), 1998, pp. 228-231
Citations number
13
Categorie Soggetti
Physics, Applied","Material Science","Physics, Condensed Matter
Journal title
ISSN journal
00406090
Volume
312
Issue
1-2
Year of publication
1998
Pages
228 - 231
Database
ISI
SICI code
0040-6090(1998)312:1-2<228:FPOCOP>2.0.ZU;2-G
Abstract
Ferroelectric properties and reliability characteristics of (111) and (100) preferred tetragonal Pb(Zr0.2Ti0.8)O-3 (PZT) thin film capacitor s have been investigated as a function of top electrode thickness. The (111) preferred films exhibit better squareness of the hysteresis loo p with larger remanant polarization and coercive field than the (100) preferred films. Top electrode thickness dependence of switching polar ization can be explained by the compressive stress induced by the top electrode annealing. The film with thinner top electrode shows less in itial switching polarization, however, better endurance characteristic s due to enhancing partial switching region, (C) 1998 Elsevier Science S.A.