ELECTRON-TRANSPORT IN POROUS SILICON

Low field and high field DC conductivity measurements have been made o n macroporous p-type porous silicon (PS) samples prepared bg anodic di ssolution. The conduction mechanism is found to be due to Variable Ran ge Hopping near the Fermi level for temperature below 150 It. At high temperatures the conduction is due to the tunneling of carriers in the localized states in the band edges near the valence band. The analysi s of the data shows that PS presents a fractal structure between 1D an d 2D systems. (C) 1998 Elsevier Science S.A.