METAL-ORGANIC CHEMICAL-VAPOR-DEPOSITION OF ALUMINUM FROM DIMETHYLETHYLAMINE ALANE

Deposition rate, electrical resistivity, microstructure, surface rough ness, and preferred orientation of aluminum films from metal-organic c hemical vapor deposition (MOCVD) with dimethylethylamine alane (DMEAA) were investigated. Maximum deposition rate was obtained at around 150 degrees C in the substrate temperature range of 100-300 degrees C. Hi gh purity Al film:, with electrical resistivity close to bulk Al was o btained. Films deposited at the substrate temperature of 130 degrees C and 160 degrees C :had columnar and equiaxed grains, respectively and in the film deposited at the substrate temperature of 210 degrees C, block-like grains were observed. Film deposited at the substrate tempe rature of 260 degrees C had faceted grains with voids between the grai ns. Surface roughness of Al film and the degree of preferred orientati on of Al film were decreased as the substrate temperature was increase d. The Al surface became rough with the increase of the film thickness . (C) 1998 Elsevier Science S.A.