NORMAL INCIDENCE N-TYPE GAAS ALXGA1-XAS QUANTUM-WELL INFRARED PHOTODETECTOR/

Authors
LUO GL HUANG Q ZHOU JM
Citation
Gl. Luo et al., NORMAL INCIDENCE N-TYPE GAAS ALXGA1-XAS QUANTUM-WELL INFRARED PHOTODETECTOR/, Thin solid films, 312(1-2), 1998, pp. 265-267
Citations number
7
Categorie Soggetti
Physics, Applied","Material Science","Physics, Condensed Matter
Journal title
Thin solid films → ACNP
ISSN journal
00406090
Volume
312
Issue
1-2
Year of publication
1998
Pages
265 - 267
Database
ISI
SICI code
0040-6090(1998)312:1-2<265:NINGAQ>2.0.ZU;2-K
Abstract
The infrared absorption and photoresponse characteristics of n-type Ga As/AlxGa1-xAs multiple quantum wells infrared photodetector structure have been studied. With the normal incidence light, a detectivity D(8 .7 mu m)= 1.4 X 10(10) cm Hz(1/2)/W via free-carrier absorption in the wells is achieved at 77 K. This shows a possible fabrication of norma l incidence quantum wells infrared photodetector without a grating cou pler. (C) 1998 Elsevier Science S.A.